| 发明名称 |
Device and methodology for reducing effective dielectric constant in semiconductor devices |
| 摘要 |
Semiconductor structure includes an insulator layer having at least one interconnect feature and at least one gap formed in the insulator layer spanning more than a minimum spacing of interconnects.
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| 申请公布号 |
US7592685(B2) |
申请公布日期 |
2009.09.22 |
| 申请号 |
US20070849048 |
申请日期 |
2007.08.31 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
EDELSTEIN DANIEL C.;COLBURN MATTHEW E.;COONEY, III EDWARD C.;DALTON TIMOTHY J.;FITZSIMMONS JOHN A.;GAMBINO JEFFREY P.;HUANG ELBERT E.;LANE MICHAEL W.;MCGAHAY VINCENT J.;NICHOLSON LEE M.;NITTA SATYANARAYANA V.;PURUSHOTHAMAN SAMPATH;SANKARAN SUJATHA;SHAW THOMAS M.;SIMON ANDREW H.;STAMPER ANTHONY K. |
| 分类号 |
H01L29/93;H01L21/033;H01L21/302;H01L21/311;H01L21/4763;H01L21/768;H01L23/48;H01L23/522;H01L23/532;H01L29/40 |
主分类号 |
H01L29/93 |
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