发明名称 Sputter Deposition Method, Sputter Deposition System and Chip
摘要 According to an embodiment of the present invention, a sputter deposition method includes providing a sputter gas including krypton or xenon and accelerating ions of a plasma of the sputter gas towards a target material.
申请公布号 US2009220777(A1) 申请公布日期 2009.09.03
申请号 US20080041442 申请日期 2008.03.03
申请人 SPORN MARTIN 发明人 SPORN MARTIN
分类号 C23C14/34;B32B9/00 主分类号 C23C14/34
代理机构 代理人
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