发明名称 |
SUBSTRATE HEATING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE |
摘要 |
In a substrate heating apparatus, thermoelectrons generated by a filament (132) in a vacuum heating vessel (103) are accelerated to collide against a conductive heater (131) which forms one surface of the vacuum heating vessel (103), thus generating heat. The conductive heater (131) is made of carbon. At least one of the inner and outer surfaces of the conductive heater (131) is coated with tantalum carbide (TaC).
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申请公布号 |
US2009218579(A1) |
申请公布日期 |
2009.09.03 |
申请号 |
US20090391345 |
申请日期 |
2009.02.24 |
申请人 |
CANON ANELVA ENGINEERING CORPORATION |
发明人 |
SHIBAGAKI MASAMI |
分类号 |
H01L29/24;H01L21/04;H01L21/67 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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