| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a liquid immersion ultraviolet photolithography method. <P>SOLUTION: The invention relates to ultraviolet photolithography at 193 nanometres or 157 nanometres. To maximize a resolution, optics having extremely high numerical apertures are used, but without using photoresists of sufficiently high refractive indexes for gaining the best benefit from this high numerical aperture. It is proposed to use standard resists (PR) but its thickness is so small as to be exposed locally by evanescent waves in the case of the total internal reflection of the rays at an extremely high angle of incidence irrespective of the presence of an immersion liquid (LQ) between the projection optics (OL) and the photoresist (PR). <P>COPYRIGHT: (C)2009,JPO&INPIT |
