发明名称 |
POROUS SILICON QUANTUM DOT PHOTODETECTOR |
摘要 |
Embodiments of the present invention provide a solar energy converter, which includes a silicon layer having at least two regions of a first and a second conductivity type that form a P-N junction, at least a portion of the silicon layer being porous, and pores in the portion of porous silicon containing a semiconductor material, the semiconductor material being different from silicon; and a first and a second electrode being placed at a bottom and a top surface of the silicon layer respectively. Methods of manufacturing the same are also provided.
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申请公布号 |
US2009217967(A1) |
申请公布日期 |
2009.09.03 |
申请号 |
US20080039826 |
申请日期 |
2008.02.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HOVEL HAROLD J.;DE SOUZA JOEL P.;SADANA DEVENDRA K. |
分类号 |
H01L31/042;H01L21/02;H01L31/00 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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