TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING AN PN JUNCTION BASED ON SILICON/GERMANIUM MATERIAL

摘要

By incorporating germanium material into thermal sensing diode structures, the sensitivity thereof may be significantly increased. In some illustrative embodiments, the process for incorporating the germanium material may be performed with high compatibility with a process flow for incorporating a silicon/germanium material into P-channel transistors of sophisticated semiconductor devices. Hence, temperature control efficiency may be increased with reduced die area consumption.