| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which is improved in light extraction efficiency. <P>SOLUTION: The semiconductor light-emitting device 1 includes a support structure 6, and a light-emitting structure 5. The support structure 6 includes a support substrate 20, and a support substrate-side bonding layer 200 disposed on one surface of the support substrate 20. The light-emitting structure 5 includes: a light-emitting structure-side bonding layer 170 bonded to the support substrate-side bonding layer 200; a reflection region disposed on the light-emitting structure-side bonding layer 170 opposite the support substrate 20; and a semiconductor multilayer structure 130 including a light-emitting layer 135 disposed on the reflection region opposite the light-emitting structure-side bonding layer 170, and a light-extraction surface disposed on the light-emitting layer 135 opposite the reflection region for reflecting diffusely the light. The reflection region includes a transparent layer 140 made of a material with a lower refractive index than that of the semiconductor multilayer structure 130, and a reflection layer 150. The transparent layer 140 has such a thickness that interference caused by multiple reflection of light input to the transparent layer 140 can be suppressed. <P>COPYRIGHT: (C)2009,JPO&INPIT |
