| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress an unstable phenomenon caused by a silicon-rich silicon nitride film. <P>SOLUTION: This manufacturing method of a semiconductor device includes processes of: forming a first silicon nitride film 12 having a refractive index of 2.2 or more on a semiconductor layer 11 formed of a GaN-based or InP-based compound semiconductor; forming a second silicon nitride film 14 having a lower refractive index than the first silicon nitride film 12 on the first silicon nitride film 12; forming a source electrode 16 and a drain electrode 18 in regions with the semiconductor layer 11 exposed therefrom; heat-treating the source electrode 16 and drain electrode 18 with the first silicon nitride film 12 and the second silicon nitride film 14 formed; and forming a gate electrode on the semiconductor layer 11 between the source electrode 16 and the drain electrode 18. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
