| 摘要 |
PROBLEM TO BE SOLVED: To provide a light deflector which facilitates control of a light deflection angle. SOLUTION: A semiconductor laser 1 includes: a laser part 2 of emitting a laser beam; and a light deflection part 3 of deflecting the laser beam emitted from the laser part 2. The laser part 2 and the light deflection part 3 are configured by successively laminating an n-type clad layer, an n-type guide layer, a multiple quantum well layer, a p-type guide layer, a p-type clad layer and a p-type contact layer on an n-GaAs substrate. Therein, the thickness of a quantum well layer of the multiple quantum well layer of the light deflection part 3 is set so as to become thinner than the thickness of a quantum well layer of a multiple quantum well layer of the laser part 2. Further, a plurality of p-type electrodes 28 which are formed in a shape extended toward the direction D1 on which the light is made incident and are arranged with a fixed prescribed arrangement interval G1 along a direction D2 vertical to the direction D1 are disposed on the contact layer of the light deflection part 3. COPYRIGHT: (C)2009,JPO&INPIT
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