发明名称 |
III-V NITRIDE SEMICONDUCTOR DEVICE COMPRISING A DIAMOND LAYER |
摘要 |
<p>The invention relates to a semiconductor device, in particular to a chemical field effect transistor (ChemFET), a high-electron mobility transistor (HEMT) and an ion-sensitive field effect transistor (ISFET), as well as a method for manufacturing the same. The semiconductor device comprises a structure, the structure comprises a substrate, a first layer comprising GaN and a second layer comprising InAlN, wherein the first and the second layer are arranged parallely to each other on the substrate, and wherein the structure comprises a third layer comprising diamond.</p> |
申请公布号 |
WO2009106328(A1) |
申请公布日期 |
2009.09.03 |
申请号 |
WO2009EP01379 |
申请日期 |
2009.02.26 |
申请人 |
UNIVERSITAET ULM;KOHN, ERHARD;DIPALO, MICHELE |
发明人 |
KOHN, ERHARD;DIPALO, MICHELE |
分类号 |
H01L29/20;G01N27/414;H01L29/16;H01L29/267;H01L29/778 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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