HEXACHLOROPLATINIC ACID ASSISTED SILICON NANOPARTICLE FORMATION METHOD

摘要

The invention provides a silicon nanoparticle formation method that can rapidly produce substantial quantities of silicon nanoparticles, which are readily recoverable for subsequent uses. A preferred method includes treating a silicon substrate with hexachloroplatinic acid and etching the silicon substrate with HF/H2O2 to form silicon nanoparticles on the surface of the silicon. Preferred methods of the invention use a cathodization of silicon source material in hexachloroplatinic acid/HF/H2O2 to form Si nanoparticles. Other embodiments use a currentless immersion of silicon material in hexachloroplatinic acid followed by etching. In preferred embodiments of the invention, the silicon source material is a silicon substrate, e.g., a silicon wafer.