| 摘要 |
The present invention relates to producing ceramic targets, which serves as a material source for magnetron, electron-beam, ion-beam and other film applying methods in micro-, opto-, nano-electronics. The aim of the proposed invention is to reduce the doping level of ceramics by non-controllable impurities, to increase a ceramic density and to improve performance characteristics of ceramic targets. In the method for synthesizing the ceramics doped by a low-melting metal consisting in that a mixture of components is pressed and sintered; as a doping additive, the mixture of components contains a low-melting metal and the surface of the main component particles is covered and moistened prior to pressing by the doping metal layer by grinding the mixture of the components. The grinding can be carried out at a melting temperature of the low-melting metal. In a particular case, for the synthesis of zinc oxide ceramic doped with gallium, the mixture of zinc oxide powder with gallium is triturated at a gallium melting temperature. The component mixture can contain a boron compound, as a binder and a doping additive, forming boron oxide during sintering.
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