DOUBLE GUARD RING EDGE TERMINATION FOR SILICON CARBIDE DEVICES AND METHODS OF FABRICATING SILICON CARBIDE DEVICES INCORPORATING SAME

摘要

Edge termination structures for semiconductor devices are provided including a plurality of spaced apart concentric floating guard rings in a semiconductor layer that at least partially surround a semiconductor junction. The spaced apart concentric floating guard rings have a highly doped portion and a lightly doped portion. Related methods of fabricating devices are also provided herein.