发明名称 |
GRAPHENE SUBSTRATE, AND MANUFACTURING METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a graphene substrate having a graphene of wafer size without using a silicon carbide substrate as a support substrate. SOLUTION: The graphene 31 is formed on a surface of an SiC substrate 30 by heat-treating the SiC substrate 30, and amorphous silicon 20 is formed on the graphene 31. An Si substrate 10 is stuck on the SiC substrate 30 with the amorphous silicon 20 interposed therebetween. The stuck SiC substrate 30 is peeled from the assembly of the Si substrate 10 and the SiC substrate 30 which are stuck to each other. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009200177(A) |
申请公布日期 |
2009.09.03 |
申请号 |
JP20080039263 |
申请日期 |
2008.02.20 |
申请人 |
DENSO CORP |
发明人 |
OSHIMA HISAZUMI;MITSUOKA YOSHIHITO |
分类号 |
H01L21/02;C01B31/02;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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