SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of preventing degradation of a withstand voltage of a gate insulation film of a peripheral transistor, in relation to a logic semiconductor device with a nonvolatile memory mixedly mounted thereon. SOLUTION: This manufacturing method of a semiconductor device includes processes of: forming an element separation region defining an active region on a semiconductor substrate; forming a first insulation film; forming a second insulation film having an etching characteristic different from that of the first insulation film; removing the second insulation film formed in a region including at least a boundary between the active region and the element separation region by dry etching using a fluorocarbon-based etching gas; removing a fluorocarbon film adhering to a surface of the first insulation film in the dry etching by exposing it to an atmosphere containing oxygen; and removing the first insulation film by wet etching. COPYRIGHT: (C)2009,JPO&INPIT