| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an epitaxial wafer, the method enabling a reduction in occurrence of particles due to friction of a back surface edge portion and a susceptor caused by warpage of the wafer when carried into a reactor vessel and occurrence of scratches on the silicon wafer back surface edge portion without requiring a complicated apparatus. <P>SOLUTION: In the method for manufacturing the epitaxial wafer, by which an epitaxial layer is formed on the surface of the silicon wafer 21 arranged in the reactor vessel 20 by distributing a raw material gas in the reactor vessel 20, the temperature of the susceptor 24 at the time of carrying the silicon wafer 21 into the reactor 20 is adjusted in accordance with resistivity of the silicon wafer 21. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
