发明名称 |
WAFER-LEVEL FABRICATION OF LIDDED CHIPS WITH ELECTRODEPOSITED DIELECTRIC COATING |
摘要 |
A unit including a semiconductor element, e.g., a chip-scale package (350, 1350) or an optical sensor unit (10) is fabricated. A semiconductor element (300) has semiconductive or conductive material (316) exposed at at least one of the front (302) and rear surfaces (114) and conductive features (310) exposed thereat which are insulated from the semiconductive or conductive material. By electrodeposition, an insulative layer (304) is formed to overlie the at least one of exposed semiconductive material or conductive material. Subsequently, a plurality of conductive contacts (308) and a plurality of conductive traces (306) are formed overlying the electrodeposited insulative layer (304) which connect the conductive features (310) to the conductive contacts (308). An optical sensor unit (10) can be incorporated in a camera module (1030) having an optical element (1058) in registration with an imaging area (1026) of the semiconductor element (1000). |
申请公布号 |
KR20090093973(A) |
申请公布日期 |
2009.09.02 |
申请号 |
KR20097011216 |
申请日期 |
2007.10.23 |
申请人 |
TESSERA TECHNOLOGIES HUNGARY KFT. |
发明人 |
OGANESIAN VAGE;GRINMAN ANDREY;ROSENSTEIN CHARLES;HAZANOVICH FELIX;OVRUTSKY DAVID;DAYAN AVI;AKSENTON YULIA;HECHT ILYA;HABA BELGACEM;HUMPSTON GILES |
分类号 |
H01L27/28;H01L23/31;H01L23/538 |
主分类号 |
H01L27/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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