| 摘要 |
A method of manufacturing a semiconductor device is provided to increase the amount of edge part by forming a buffer oxide layer on the trench portion to be formed. The mask pattern is formed on the substrate(10) having the active area(10A). Using the mask pattern as a mask to oxidize the substrate of the active area, the first buffer oxide layer(13) is formed. The bird's beak phenomenon is generated in the edge of the first buffer oxide layer. The substrate are etched by using a mask as the second buffer oxide layer(14) and the first buffer oxide layer, and the hard mask film(15). The isolation film(11) is formed on the substrate by the STI process. The wall oxide liner nitride film and the liner oxide are formed on the trench's surface.
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