发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To correct the zero point of a flow rate control portion, and to confirm a correction result with efficiency. SOLUTION: A substrate processing apparatus includes: a processing chamber; the flow rate control portion which adjusts the flow rate of a gas supplied into the processing chamber; and a control portion which controls the operation of the flow rate control portion. The flow rate control portion starts correction processing for correcting the zero point when receiving a correction processing start request, and transmits flow rate monitor information showing a flow rate at the zero point when the correction processing is completed. The control portion transmits the correction processing start request to the flow rate control portion before executing a substrate processing recipe, receives the flow rate monitor information from the flow rate control portion when the correction processing is completed, and determines that the correction processing has succeeded when the flow rate at the zero point is within a predetermined range or results in failure when the flow rate at the zero point is not within the predetermined range. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011114264(A) 申请公布日期 2011.06.09
申请号 JP20090271370 申请日期 2009.11.30
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NAKATANI KAZUO
分类号 H01L21/205;C23C16/52;H01L21/22;H01L21/324 主分类号 H01L21/205
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