| 摘要 |
PROBLEM TO BE SOLVED: To provide a reference voltage circuit for achieving reduction in size by microfabrication process and obtaining a high power supply rejection ratio. SOLUTION: The reference voltage circuit includes: a first transistor M1, i.e., an enhancement type N-channel transistor the gate and the drain of which are connected; a second transistor M2, i.e., a depletion type N-channel transistor the gate of which is connected to the gate of the first transistor M1 and the source of the transistor M2 itself where the first transistor M1 and the second transistor M2 are connected in series via the drain of the first transistor M1, and the reference voltage is generated at each gate of the first transistor M1 and the second transistor M2. The reference voltage circuit further includes a third transistor M3, i.e., a depletion type N-channel transistor the absolute threshold of which is larger than that of the second transistor M2, and the current drive capability of which is higher than that of the second transistor M2, and the third transistor M3 is connected in series via the drain of the second transistor M2. COPYRIGHT: (C)2011,JPO&INPIT
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