发明名称 METHODS OF FORMING CONDUCTIVE VIAS
摘要 Methods of forming a conductive via may include forming a blind via hole partially through a substrate, forming an aluminum film on surfaces of the substrate, removing a first portion of the aluminum film from some surfaces, selectively depositing conductive material onto a second portion of the aluminum film, and exposing the blind via hole through a back side of the substrate. Methods of fabricating a conductive via may include forming at least one via hole through at least one unplated bond pad, forming a first adhesive over at least one surface of the at least one via hole, forming a dielectric over the first adhesive, forming a base layer over the dielectric and the at least one unplated bond pad, and plating nickel onto the base layer.
申请公布号 US2011136336(A1) 申请公布日期 2011.06.09
申请号 US201113029950 申请日期 2011.02.17
申请人 MICRON TECHNOLOGY, INC. 发明人 AKRAM SALMAN;HIATT WILLIAM MARK;OLIVER STEVEN;WOOD ALAN G.;RIGG SIDNEY B.;WARK JAMES M.;KIRBY KYLE K.
分类号 H01L21/768 主分类号 H01L21/768
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