| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a high-quality silicon carbide single crystal without distortion. SOLUTION: The method for producing the silicon carbide single crystal including supplying a sublimation gas of a silicon carbide raw material to a silicon carbide seed crystal 13 arranged on a pedestal 10 to grow the silicon carbide single crystal on the silicon carbide seed crystal 13 includes: arranging a separating member 11 composed of silicon carbide between the pedestal 10 and the silicon carbide seed crystal 13 to mechanically hold the separating member 11 on the pedestal 10 by a supporting member 12 without adhesion; and adhering the silicon carbide seed crystal 13 to the surface of the separating member 11 on the opposite side of the pedestal 10, wherein the separating member 11 and the supporting member 12 are relatively arranged so that the adhesive surface between the separating member 11 and the silicon carbide seed crystal 13 is separated from the lowest position of the supporting member 12 by 5 mm or more in the vertical direction to grow the silicon carbide single crystal. COPYRIGHT: (C)2011,JPO&INPIT |
