发明名称 |
NANOWIRE FET HAVING INDUCED RADIAL STRAIN |
摘要 |
An intermediate process device is provided and includes a nanowire connecting first and second silicon-on-insulator (SOI) pads, a gate including a gate conductor surrounding the nanowire and poly-Si surrounding the gate conductor and silicide forming metal disposed to react with the poly-Si to form a fully silicided (FUSI) material to induce radial strain in the nanowire.
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申请公布号 |
US2011133163(A1) |
申请公布日期 |
2011.06.09 |
申请号 |
US20090631203 |
申请日期 |
2009.12.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BANGSARUNTIP SARUNYA;COHEN GUY M.;MURRAY CONAL E.;SLEIGHT JEFFREY W. |
分类号 |
H01L29/66;H01L21/336 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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