SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device which miniaturizes each memory cell while suppressing degradation of a characteristic of the semiconductor memory device. SOLUTION: The semiconductor memory device includes: a substrate 101; gate insulating films 111 formed on the substrate and each functioning as an FN (Fowler-Nordheim) tunneling film; first floating gates 112 formed on the gate insulating films; first inter-gate insulating films 113 formed on the first floating gates and each functioning as an FN tunneling film; second floating gates 114 formed on the first inter-gate insulating films; a second inter-gate insulating film 115 formed on the second floating gates and functioning as a charge blocking film; and a control gate 116 formed on the second inter-gate insulating film. COPYRIGHT: (C)2011,JPO&INPIT