发明名称 Semiconductor Device
摘要 A semiconductor device is provided in which a transistor which supplies a current to a load (an EL pixel and a signal line) can supply an accurate current without being affected by a variation. A voltage of each terminal of a transistor is controlled by using a feedback circuit using an amplifier circuit. A current Idata is inputted from a current source circuit to a transistor and a gate-source voltage (a source potential) required for the transistor to flow the current Idata is set by using the feedback circuit. The feedback circuit is controlled to operate so that a drain potential of the transistor becomes a predetermined potential. Then, a gate voltage required to flow the current Idata is set. By using the set transistor, an accurate current can be supplied to the load (an EL element and a signal line). As a drain potential can be controlled, the kink effect can be reduced.
申请公布号 US2011133828(A1) 申请公布日期 2011.06.09
申请号 US20100963672 申请日期 2010.12.09
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KIMURA HAJIME
分类号 H01L25/00;G09G3/32 主分类号 H01L25/00
代理机构 代理人
主权项
地址