METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Disclosed is a method for manufacturing a semiconductor device, which is effective for improving the on current of a MISFET by reducing the parasitic resistance by forming a semiconductor film in a semiconductor narrow part on both sides of the gate electrode by epitaxial growth. The method for manufacturing a semiconductor device is characterized in that: a first semiconductor region provided with a narrow part and a wide part is formed in the upper part of a semiconductor substrate; a gate insulating film is formed on at least a lateral surface of the narrow part; a gate electrode is formed on the gate insulating film; a mask pattern covering the wide part is formed; an extension impurity region is formed in the narrow part by performing ion implantation using the mask pattern as a mask; the mask pattern is removed; a heat treatment for activating the impurities is carried out; a gate sidewall is formed on a lateral surface of the gate electrode; a semiconductor film is formed on the semiconductor substrate by epitaxial growth after the formation of the gate sidewall; and a source/drain region is formed on both sides of the gate electrode.