摘要 |
A memory system includes code data generating section which generates code data based on write data. A nonvolatile semiconductor memory stores the write data and the code data for the write data and outputs read data and the code data for the read data. An error correcting section is configured to correct an error bit included in the read data using the read data and the code data for the read data, and outputs the read data which includes the error bit in accordance with a setting. An interface section receives the write data from outside of the memory system, and outputs the read data to outside of the memory system. |