PURPOSE: A polysilicon depositing device is provided to deposit polysilciion with high purity by including an opening and closing unit which opens and closes a gas storage tank to flow reaction gas toward a silicon core rod. CONSTITUTION: A reactor(110) includes a gas inlet(111) and a gas outlet(112) to discharge gas to the outside. An electrode unit(121) includes a first electrode and a second electrode which are separated from each other with a preset space. A silicon core rod(122) conducts a current in a second electrode and generates heat by itself. A silicon core rod heating unit(123) is arranged along the outer side of the silicon core rod. A gas storage tank(124) stores reaction gas inputted from the gas inlet.
申请公布号
KR101039659(B1)
申请公布日期
2011.06.08
申请号
KR20100083245
申请日期
2010.08.27
申请人
SEMIMATERIALS. CO., LTD.
发明人
KIM, BOK SAENG;YOU, HO JUNG;KIM, BO SUN;LEE, CHANG RAE;KANG, SEUNG OH;PARK, GYU DONG;PARK, KUN