发明名称 Well structure for body biasing, manufacturing and design method
摘要 <p>An integrated circuit comprising: a plurality of n-well and p-well regions (305, 306) arranged in alternating parallel rows across a plane of the integrated circuit; a deep n-well region (301) beneath the n-well and p-well regions (305, 306) and extending between first and second n-well region rows (305 1 , 305 2 ) either side of a third n-well region row (305 3 ); and a plurality of n-well region columns (307) connecting the first and second n-well region rows (305 1 , 305 2 ) and overlaying a portion of a boundary of the deep n-well region (301).</p>
申请公布号 EP2330624(A1) 申请公布日期 2011.06.08
申请号 EP20090252711 申请日期 2009.12.01
申请人 NXP B.V. 发明人 MEIJER, RINZE IDA MECHTILDIS PETER;PINEDA DE GYVEZ, JOSE DE JESUS
分类号 H01L27/02 主分类号 H01L27/02
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