| 摘要 |
FIELD: physics. ^ SUBSTANCE: multilayer magnetoresistive composite nanostructure has several sets of alternating layers of magnetically soft and magnetically hard nanoclusters insulated at the top and bottom by a continuous dielectric layer of antiferromagnetic material. One set has an antiferromagnetic layer, a layer of magnetically soft nanoclusters, an antiferromagnetic layer, a layer of magnetically hard nanoclusters, and a antiferromagnetic layer, where thickness of the nanocluster film is equal to 0.8-2.5 nm. The number of said sets of layers is between 2 and 5. ^ EFFECT: design of a magnetoresistive nanostructure whose production technology guarantees required parametres, giant magnetoresistive effect in the material with working capacity under high temperature conditions, and high reproducibility of parametres under batch production conditions. ^ 5 cl, 2 dwg |
