SEMICONDUCTOR DEVICE FOR DRIVING LEDS

摘要

PURPOSE: A semiconductor device for driving a light emitting diode is provided to obtain a sufficient driving voltage by preventing a reach-through property between a p+ drain region and a p+ semiconductor substrate using an n-well. CONSTITUTION: A first active region and a second active region are defined on a p+ semiconductor substrate. A p- epitaxial layer(20) is formed on the semiconductor substrate. An n-well(30) is formed under the surface of the p- epitaxial layer of the first active region. An n drain region(40) is formed under the surface of both sides of the n-well. A field insulating film(50) is formed on the n drain region. A gate insulating layer(60) is formed on one part of the n drain region.