发明名称 Method for producing a connection electrode for two semiconductor zones arranged one above another
摘要 A method for producing a connection electrode for a first semiconductor zone and a second semiconductor zone includes producing a trench extending through the first semiconductor zone right into the second semiconductor zone in such a way that the first semiconductor zone is uncovered at sidewalls of the trench and the second semiconductor zone is uncovered at least at a bottom of the trench. The method also includes applying a protective layer to a first one of the first and second semiconductor zones in the trench, and producing a first connection zone in the second of the two semiconductor zones, which is not covered by the protective layer. The method further includes depositing an electrode layer at least onto the sidewalls and the bottom of the trench for the purpose of producing the connection electrode.
申请公布号 US7851349(B2) 申请公布日期 2010.12.14
申请号 US20060527743 申请日期 2006.09.26
申请人 INFINEON TECHNOLOGIES AUSTRIA AG 发明人 RIEGER WALTER;GANITZER PAUL;HAEBERLEN OLIVER;HIRLER FRANZ;ZUNDEL MARKUS;ZELSACHER RUDOLF;BACHER ERWIN
分类号 H01L21/283 主分类号 H01L21/283
代理机构 代理人
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