发明名称 |
Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device |
摘要 |
A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base 13, a GaN based semiconductor region 15, an active layer active layer 17, and a GaN semiconductor region 19. The primary surface 13a of the group III nitride semiconductor supporting base 13 is not any polar plane, and forms a finite angle with a reference plane Sc that is orthogonal to a reference axis Cx extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region 15 is grown on the semipolar primary surface 13a. A GaN based semiconductor layer 21 of the GaN based semiconductor region 15 is, for example, an n-type GaN based semiconductor, and the n-type GaN based semiconductor is doped with silicon. A GaN based semiconductor layer 23 of an oxygen concentration of 5×1016 cm−3 or more provides an active layer 17 with an excellent crystal quality, and the active layer 17 is grown on the primary surface of the GaN based semiconductor layer 23.
|
申请公布号 |
US7851821(B2) |
申请公布日期 |
2010.12.14 |
申请号 |
US20100714049 |
申请日期 |
2010.02.26 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KYONO TAKASHI;YOSHIZUMI YUSUKE;ENYA YOHEI;AKITA KATSUSHI;UENO MASAKI;SUMITOMO TAKAMICHI;NAKAMURA TAKAO |
分类号 |
H01L29/24;B82Y10/00;B82Y20/00;B82Y40/00;H01L21/205;H01L29/06;H01L29/739;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109;H01L33/00;H01L33/06;H01L33/32;H01S5/343 |
主分类号 |
H01L29/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|