发明名称 |
Method for growing Ge expitaxial layer on patterned structure with cyclic annealing |
摘要 |
A Ge epitaxial layer is grown on a silicon substrate with a patterned structure. Through a cyclic annealing, dislocation defects are confined. The present invention provides a method for manufacturing a high-quality Ge epitaxial layer with a low cost and a simple procedure. The Ge epitaxial layer obtained can be applied to high mobility Ge devices or any lattice-mismatched epitaxy on a photonics device.
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申请公布号 |
US7851378(B2) |
申请公布日期 |
2010.12.14 |
申请号 |
US20070898345 |
申请日期 |
2007.09.11 |
申请人 |
NATIONAL APPLIED RESEARCH LABORATORIES |
发明人 |
CHENG MING-HSIN;HUANG SHIH-CHIANG;CHENG TSUNG-CHIEH;LUO GUANG-LI;HSU CHINQ-LONG |
分类号 |
H01L21/02;H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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