发明名称 Correcting for over programming non-volatile storage
摘要 A non-volatile storage system corrects over programmed memory cells by selectively performing one or more erase operations on a subset of non-volatile storage elements that are connected to a common word line (or other type of control line).
申请公布号 US7852683(B2) 申请公布日期 2010.12.14
申请号 US20080167128 申请日期 2008.07.02
申请人 SANDISK CORPORATION 发明人 LUTZE JEFFREY W;LI YAN
分类号 G11C16/04 主分类号 G11C16/04
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