发明名称 |
Nonvolatile memory using resistance material |
摘要 |
A nonvolatile memory using a resistance material includes first and second memory-cell blocks having different block address information and each including a plurality of nonvolatile memory cells; a global bitline common to the first and second memory-cell blocks; first and second local bitlines corresponding to the first and second memory-cell blocks, respectively, and coupled to each other; and a common bitline selection circuit interposed between the first and second memory-cell blocks and coupled between the first and second local bitlines and the global bitline.
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申请公布号 |
US7852666(B2) |
申请公布日期 |
2010.12.14 |
申请号 |
US20080243578 |
申请日期 |
2008.10.01 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
CHOI JOON-YONG;CHOI BYUNG-GIL |
分类号 |
G11C11/00;G11C8/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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