发明名称 |
High performance chirped electrode design for large area optoelectronic devices |
摘要 |
An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base. Pixels include oppositely doped semiconductor layer and a top electrode formed on the oppositely doped semiconductor layer. The top electrode has a grid pattern with at least one busbar and a plurality of fingers extending from the busbar, and spacing between the fingers decreases with distance from the bondpad along the busbar. Each pixel can also include a multiple quantum well formed on the semiconductor base. The top electrode shape produces an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.
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申请公布号 |
US7852543(B2) |
申请公布日期 |
2010.12.14 |
申请号 |
US20100753952 |
申请日期 |
2010.04.05 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY |
发明人 |
GOETZ PETER G.;RABINOVICH WILLIAM S |
分类号 |
G02F1/03;G02B26/00 |
主分类号 |
G02F1/03 |
代理机构 |
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地址 |
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