发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A method for fabricating a semiconductor device includes the steps of: forming a first insulating film on a semiconductor substrate; removing part of the first insulating film; forming a second insulating film having a leakage current density higher than that of the first insulating film on a region where the part of the first insulating film has been removed on the semiconductor substrate; forming an undoped semiconductor film on the first and second insulating films; implanting an impurity into part of the undoped semiconductor film, thereby defining semiconductor regions of a first conductivity type dotted as discrete islands; forming a third insulating film on the semiconductor regions of the first conductivity type and the undoped semiconductor film; and removing part of the third insulating film by wet etching. At least the second insulating film is formed under the semiconductor regions of the first conductivity type.
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申请公布号 |
US7851891(B2) |
申请公布日期 |
2010.12.14 |
申请号 |
US20090424894 |
申请日期 |
2009.04.16 |
申请人 |
PANASONIC CORPORATION |
发明人 |
SENGOKU NAOHISA;MATSUMOTO MICHIKAZU |
分类号 |
H01L27/04;H01L29/06;H01L21/822;H01L21/8234;H01L27/06;H01L27/088 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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