发明名称 Semiconductor device
摘要 A semiconductor device is provided in which a transistor which supplies a current to a load (an EL pixel and a signal line) can supply an accurate current without being affected by a variation. A voltage of each terminal of a transistor is controlled by using a feedback circuit using an amplifier circuit. A current Idata is inputted from a current source circuit to a transistor and a gate-source voltage (a source potential) required for the transistor to flow the current Idata is set by using the feedback circuit. The feedback circuit is controlled to operate so that a drain potential of the transistor becomes a predetermined potential. Then, a gate voltage required to flow the current Idata is set. By using the set transistor, an accurate current can be supplied to the load (an EL element and a signal line). As a drain potential can be controlled, the kink effect can be reduced.
申请公布号 US7852330(B2) 申请公布日期 2010.12.14
申请号 US20040859475 申请日期 2004.06.03
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KIMURA HAJIME
分类号 G09G5/00;G09G3/30;G09G3/32 主分类号 G09G5/00
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