| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device that uses a photodiode with wavelength dependency and has enough specifications for APC driving. SOLUTION: The semiconductor laser device 10 includes a semiconductor laser chip 100 having a light emission surface 100a and a light reflective surface 100b as opposed resonator end faces, and the photodiode 40 which detects light emitted from the side of the reflective surface 100b. The photodiode 40 is used in a wavelength band in which sensitivity thereof increases as the wavelength becomes longer, and has: a first dielectric multilayer film formed on the light emission surface 100a; and a second dielectric multilayer film formed on the light reflective surface 100b. The inequality ofλ<SB>f</SB><λ<SB>r</SB>is satisfied, whereinλ<SB>f</SB>is the reflection factor peak wavelength of the first dielectric multilayer film andλ<SB>r</SB>is the reflection factor peak wavelength of the second dielectric multilayer film. COPYRIGHT: (C)2011,JPO&INPIT |
