| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a germanium single crystal, capable of preventing germanium oxide from depositing on the surface of a growing crystal and growing the germanium single crystal with a low dislocation density or free of dislocation. SOLUTION: After the surface of a germanium melt 1a is partially or wholly covered with a melt 2a of boron oxide (B<SB>2</SB>O<SB>3</SB>) inside a crucible 10 made of quartz, glassy carbon or graphite, a germanium single crystal 4 is pulled and grown by Czochralski method (CZ method). The inside of the furnace is kept high vacuum or an argon atmosphere. COPYRIGHT: (C)2011,JPO&INPIT
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