发明名称 MEMORY SYSTEM
摘要 A memory system includes a DRAM 20 that performs writing and readout in a unit equal to or smaller than a cluster, a NAND memory 10 that performs writing and readout in a page unit, and a management table group in which management information including storage locations of data stored in the DRAM 20 and the NAND memory 10 is stored. When a readout request is received from the outside, a data managing unit 120 notifies, when an unwritten logical address area is present in a storage area of the NAND memory to which a logical address area requested to be read out is mapped, fixed data stored in the DRAM 20 to the outside in association with the logical address area.
申请公布号 US2010312948(A1) 申请公布日期 2010.12.09
申请号 US20090529126 申请日期 2009.02.10
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YANO JUNJI;MATSUZAKI HIDENORI;HATSUDA KOSUKE
分类号 G06F12/02;G06F12/00 主分类号 G06F12/02
代理机构 代理人
主权项
地址