| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is low in cost and low in resistance, and to provide a method of manufacturing the semiconductor device. SOLUTION: The semiconductor device includes: a substrate; a semiconductor layer formed on the substrate; and an inter-digital electrode which is formed on the semiconductor layer such that the width in a surface direction of the semiconductor layer is larger than the height in a direction perpendicular to a surface of the semiconductor layer. Further, the method of manufacturing the same includes: a semiconductor layer forming process of forming the semiconductor layer on the substrate; and an electrode forming process of forming, on the semiconductor layer, the inter-digital electrode such that the width in the surface direction of the semiconductor layer is larger than the height in the direction perpendicular to the surface of the semiconductor layer. COPYRIGHT: (C)2011,JPO&INPIT |
