| 摘要 |
<p>Disclosed is a copper foil for semiconductor package substrates which comprises a copper foil and, formed on the roughened surface thereof that serves as a resin adherend surface, either a chromate treatment layer or a coating layer constituted of chromium oxide and either zinc or zinc oxide, and a silane coupling agent layer. Also disclosed is the copper foil for semiconductor package substrates which is characterized in that the amount of chromium in the chromate coating layer is 25-150 µg/dm2 and the amount of zinc is 150 µg/dm2 or smaller. Further provided is the copper foil for semiconductor package substrates which is characterized in that the silane coupling agent layer comprises a tetraalkoxysilane and at least one alkoxysilane having a functional group reactive with resins. Furthermore provided is an electrolytic technique for copper foil treatment with which it is possible to effectively prevent the circuit erosion that occurs when a copper foil is superposed on a resin substrate and a circuit is formed by soft etching with a sulfuric-acid-based etchant.</p> |
