SOS SUBSTRATE LOW IN DEFECT DENSITY IN PROXIMITY OF INTERFACE

摘要

PROBLEM TO BE SOLVED: To provide an SOS (silicon on sapphire) substrate low in the defect density of a surface even in an extremely thin silicon film by solving a problem that defective density increases due to incompatibility in a lattice constant between silicon and sapphire.

SOLUTION: The pasted SOS substrate is obtained by steps for: forming an ion implantation film 2 by implanting ions from the surfaces of the sapphire substrate 3 and the semiconductor substrate 1; applying surface activation treatment to at least one of the surfaces; pasting the surface of the semiconductor substrate 1 to the surface of the sapphire substrate 3 at 50-350°C; applying heat treatment at the highest temperature of 200-350°C to the pasted substrate to obtain a junction body 6; and bringing the junction body 6 to a state of a temperature higher than the pasting temperature, irradiating the ion implantation layer 2 of the semiconductor substrate 1 with visible light from the sapphire substrate 3 side or the semiconductor substrate 1 side to make the interface of the ion implantation layer 2 fragile, and transferring the semiconductor thin film 4.

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