| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having reduced distortion to a high frequency input, and to provide a high frequency switch circuit. SOLUTION: The semiconductor device includes: a fourth semiconductor region 16 of a second conductivity type formed in contact with a third semiconductor region 15 of the second conductivity type on an insulating layer 12; an insulating film 17 formed on the third semiconductor region 15 and the fourth semiconductor region 16; a gate electrode 18 formed on the insulating film 17; and a body electrode 23 electrically connected with the fourth semiconductor region 16 wherein a direct voltage is applied on the body electrode. In an ON-state where a voltage of not less than a threshold voltage is applied on the gate electrode 18, the fourth semiconductor region 16 is depleted, so that pass of direct current between the body electrode 23 and the third semiconductor region 15 is interrupted. COPYRIGHT: (C)2011,JPO&INPIT
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