发明名称 |
Work function adjustment with the implant of lanthanides |
摘要 |
Semiconductor devices and fabrication methods are provided, in which fully silicided transistor gates are provided for MOS transistors. A lanthanide series metal is implanted into the gate electrode layer prior to silicidation and diffuses into the gate dielectric during an activation anneal. This process and resultant structure provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting transistor.
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申请公布号 |
US7858459(B2) |
申请公布日期 |
2010.12.28 |
申请号 |
US20070737856 |
申请日期 |
2007.04.20 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
RAMIN MANFRED;PAS MICHAEL F.;ALSHAREEF HUSAM |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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