| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing an in-plane oriented thin film of a wurtzite-type crystal, in which a large area film can be produced and cost required for the apparatus can be suppressed. <P>SOLUTION: A thin film is produced by depositing sputtered particles produced by introducing a plasma-producing gas into a vacuum vessel 11 and sputtering a target T of a wurtzite-type crystal arranged in the vacuum vessel 11 on a substrate S attached to a substrate holder 15 arranged in the vacuum vessel 11 opposite to the target T. At this time, high frequency voltage is applied between the substrate holder 15 and a wall of the vacuum vessel 11. This forms a plasma sheath on a surface of the substrate S to increase the amount of cations produced by ionization of the plasma-producing gas, and the plasma sheath accelerates the cations. Thus, the cations are incident into the thin film during film formation with sufficient energy, which makes it difficult for a close-packed plane of the wurtzite-type crystal to grow in parallel with the substrate. As a result, it is possible to obtain the in-plane oriented thin film in which the c axis of the wurtzite-type crystal is oriented in the in-plane direction as a whole. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
