发明名称 |
ABRASIVE, POLISHING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
The present invention relates to a polishing method for polishing a to-be-polished surface including a polysilicon film having a silicon dioxide film directly thereunder, in manufacturing a semiconductor integrated circuit device, the method including: a first polishing step of polishing and planarizing the polysilicon film with a first abrasive containing a cerium oxide particle, water and an acid; and a second polishing step of polishing the polysilicon film planarized in the first polishing step with a second abrasive containing at least a cerium oxide particle, water, an acid and a water-soluble polyamine or a salt thereof and stopping polishing by exposure of the silicon dioxide film.
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申请公布号 |
US2011207327(A1) |
申请公布日期 |
2011.08.25 |
申请号 |
US201113100338 |
申请日期 |
2011.05.04 |
申请人 |
ASAHI GLASS COMPANY, LIMITED |
发明人 |
SUZUKI MASARU;NAKAZAWA NORIHITO |
分类号 |
H01L21/306;C09K13/00 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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