| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the manufacturing yield of a nitride semiconductor device by preventing the abnormal growth of an n-type nitride semiconductor doped with donors. <P>SOLUTION: In the manufacturing method of the nitride semiconductor device including a process to form stratifiedly the n-type nitride semiconductor on a substrate by organometalliccompound vapor growth method, while supplying nitrogen material continuously on the substrate, a group III material and a donor material are alternatively supplied to form the n-type nitride semiconductor. In a preferable embodiment, the flow volume of the donor material on the occasion to supply the group III material and the donor material alternatively is set, so that the variation width of the resistivity of the n-type nitride semiconductor becomes less than 0.01 Ωcm when the flow volume is changed from 0.5 times to 2 times of the volume. <P>COPYRIGHT: (C)2008,JPO&INPIT |
